? 2004 ixys all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c 800 v v dgr t j = 25 c to 150 c; r gs = 1 m ? 800 v v gs continuous 30 v v gsm transient 40 v i d25 t c = 25 c28a i dm t c = 25 c, pulse width limited by t jm 150 a i ar t c = 25 c38a e ar t c = 25 c75mj e as t c = 25 c 4.0 j dv/dt i s i dm , di/dt 100 a/ s, v dd v dss , 20 v/ns t j 150 c, r g = 2 ? p d t c = 25 c 416 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6 mm (0.063 in) from case for 10 s 300 c v isol 50/60 hz, rms, t = 1 min 2500 v~ i sol = 1ma, t = 1 s 3000 v~ f c mounting force 20..120 / 4.6..27 n/lb weight 5g hiperfet tm mosfet q2-class (electrically isolated back surface) features z double metal process for low gate resistance z silicon chip on dcb substrate - high power dissipation - isolated mounting surface - 2500v electrical isolation z epoxy meet ul 94 v-0, flammability classification z avalanche energy and current rated z fast intrinsic rectifier advantages z easy assembly z space savings z high power density symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v dss v gs = 0 v, i d = 3ma 800 v v gs(th) v ds = v gs , i d = 8 ma 2.0 4.5 v i gss v gs = 30 v dc , v ds = 0 200 na i dss v ds = v dss t j = 25 c50 a v gs = 0 v t j = 125 c2ma r ds(on) v gs = 10 v, i d = i t 240 m ? pulse test, t 300 s, duty cycle d 2 % g = gate d = drain s = source ds99203(09/04) isolated back surface v dss = 800 v i d25 = 28 a r ds(on) = 240 m ? ? ? ? ? t rr 250 ns ixfr 38n80q2 isoplus247 (ixfr) g d preliminary data sheet 50
ixys reserves the right to change limits, test conditions, and dimensions. ixfr 38n80q2 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 10 v; i d = i t , pulse test 25 37 s c iss 8340 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 890 pf c rss 175 pf t d(on) 20 ns t r v gs = 10 v, v ds = 0.5 ? v dss , i d = i t 16 ns t d(off) r g = 1.0 ? (external), 60 ns t f 12 ns q g(on) 190 nc q gs v gs = 10 v, v ds = 0.5 ? v dss , i d = i t 44 nc q gd 88 nc r thjc 0.3 k/w r thck 0.15 k/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 38 a i sm repetitive; pulse width limited by t jm 150 a v sd i f = i s , v gs = 0 v, 1.5 v pulse test, t 300 s, duty cycle d 2 % t rr 250 ns q rm 1 c i rm 1 0 a i f = 25a, -di/dt = 100 a/ s, v r = 100 v ixys mosfets and igbts are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405b2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 isoplus247 outline notes: 1. test current i t = 19a
? 2004 ixys all rights reserved ixfr 38n80q2 fig. 2. extended output characteristics @ 25 o c 0 10 20 30 40 50 60 70 80 90 0 3 6 9 12 15 18 21 24 27 30 v d s - volts i d - amperes v gs = 10v 8v 7v 5.5v 5v 6v fig. 3. output characteristics @ 125 o c 0 5 10 15 20 25 30 35 40 0 2 4 6 8 10 12 14 16 18 20 v d s - volts i d - amperes v gs = 10v 7v 6v 5v 5.5v fig. 1. output characteristics @ 25 o c 0 5 10 15 20 25 30 35 40 012345678910 v d s - volts i d - amperes v gs = 10v 7v 5v 5.5v 6v fig. 4. r ds(on ) norm alized to 0.5 i d25 value vs. junction tem perature 0.4 0.7 1 1.3 1.6 1.9 2.2 2.5 2.8 3.1 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r d s ( o n ) - normalize d i d = 38a i d = 19a v gs = 10v fig. 6. drain current vs. case temperature 0 3 6 9 12 15 18 21 24 27 30 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes fig. 5. r ds(on) norm alized to 0.5 i d25 value vs. i d 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 0 102030405060708090 i d - amperes r d s ( o n ) - normalized t j = 125oc t j = 25oc v gs = 10v
ixys reserves the right to change limits, test conditions, and dimensions. ixfr 38n80q2 fig. 11. capacitance 100 1000 10000 0 5 10 15 20 25 30 35 40 v d s - volts capacitance - picofarads c iss c oss c rss f = 1mhz fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 20 40 60 80 100 120 140 160 180 200 q g - nanocoulombs v g s - volts v ds = 400v i d = 19a i g = 10ma fig. 7. input adm ittance 0 5 10 15 20 25 30 35 40 45 50 3.544.555.56 v g s - volts i d - amperes t j = 125oc 25oc -40oc fig. 8. transconductance 0 10 20 30 40 50 60 70 0 1020 30405060 i d - amperes g f s - siemens t j = -40oc 25oc 125oc fig. 9. source current vs. source-to-drain voltage 0 20 40 60 80 100 120 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 v s d - volts i s - amperes t j = 125oc t j = 25oc fig. 12. forw ard-bias safe operating area 1 10 100 1000 10 100 1000 v d s - volts i d - amperes 100s 1ms dc t j = 150oc t c = 25oc r ds(on) limit 10ms 25s
? 2004 ixys all rights reserved ixfr 38n80q2 fig. 13. maxim um transient therm al resistance 0.01 0.10 1.00 1 10 100 1000 pulse width - milliseconds r ( t h ) j c - oc / w
|
